leshan radio company, ltd. s-l2n7002wt1g sot? 323 (sc-70) device marking shipping ordering information l2n7002wt1g 6c 6c 6c = device code m =month code marking diagram & pin assignment 3 2 1 l2n7002wt3g 6c 1 0000 tape & reel maximum ratings rating symbol value unit drain?source voltage v dss 60 v dc drain?gate voltage (r gs = 1.0 m ? ) v dgr 60 v dc drain current ? continuous t c = 25 c (note 1.) ? continuous t c = 100 c (note 1.) ? pulsed (note 2.) i d i d i dm madc gate?source voltage ? continuous ? non?repetitive (t p 50 s) v gs v gsm vdc vpk thermal characteristics characteristic symbol max unit total device dissipation fr?5 board (note 3.) t a = 25 c derate above 25 c p d 225 1.8 mw mw/ c thermal resistance, junction to ambient r ja 556 c/w total device dissipation alumina substrate,(note 4.) t a = 25 c derate above 25 c p d 300 2.4 mw mw/ c thermal resistance, junction to ambient r ja 417 c/w junction and storage temperature t j, t stg c 1. the power dissipation of the package may result in a lower continuous drain current. 2. pulse test: pulse width 300 s, duty cycle 2.0%. 3. fr?5 = 1.0 x 0.75 x 0.062 in. 4. alumina = 0.4 x 0.3 x 0.025 in 99.5% alumina. n?channel sot?323 ? 75 800 20 40 115 we declare that the material of product compliance with rohs requirements. small signal mosfet 115 ma, 60 v +150 -55 to esd protected:1000v ? gate source drain 3 2 1 (top view) simplified schematic m rev .o 1/4 1 3 2 3000 tape & reel s-l2n7002wt1g s-l2n7002wt3g ? s- prefix for automotive and other applications requiring unique site and control change requirements; aec-q101 qualified and ppap capable. l2n7002wt1g
leshan radio company, ltd. l2n7002wt1g , s-l2n7002wt1g electrical characteristics (t a = 25 c unless otherwise noted) characteristic symbol min typ max unit off characteristics drain?source breakdown voltage (v gs = 0, i d = 10 adc) v (br)dss 60 ? ? vdc zero gate voltage drain current t j = 25 c (v gs = 0, v ds = 60 vdc) t j = 125 c i dss ? ? ? ? 1.0 500 adc gate?body leakage current, forward (v gs = 20 vdc) i gssf ? ? 1 adc gate?body leakage current, reverse (v gs =? 20 vdc) i gssr ? ? on characteristics (note 2.) gate threshold v oltage (v ds = v gs ,i d = 250 adc) v gs(th) 1.0 1.6 2.5 vdc on?state drain current (v ds 2.0 v ds(on) ,v gs = 10 vdc) i d(on) 500 ? ? ma static drain?source on?state voltage (v gs = 10 vdc, i d = 500 madc) (v gs = 5.0 vdc, i d = 50 madc) v ds(on) ? ? ? ? 3.75 0.375 vdc static drain?source on?state resistance (v gs = 10 v, i d = 500 madc) t c = 25 c t c = 125 c (v gs = 5.0 vdc, i d = 50 madc) t c = 2 5 c t c = 125 c r ds(on) ? ? ? ? 1.4 ? 1.8 ? 7.5 13.5 7.5 13.5 ohms forward transconductance (v ds 2.0 v ds(on) ,i d = 200 madc) g fs 80 ? ? mmhos dynamic characteristics input capacitance (v ds = 25 vdc, v gs = 0, f = 1.0 mhz) c iss ? 17 50 pf output capacitance (v ds = 25 vdc, v gs = 0, f = 1.0 mhz) c oss ? 10 25 pf reverse transfer capacitance (v ds = 25 vdc, v gs = 0, f = 1.0 mhz) c rss ? 2.5 5.0 pf switching characteristics (note 2.) turn?on delay time (v dd = 25 vdc , i d 500 madc, t d(on) ? 7 20 ns turn?off delay time (v r g = 25 ? , r l = 50 ? ,v gen = 10 v) t d(off) ? 11 40 ns body?drain diode ratings diode forward on?voltage (i s = 115 madc, v gs = 0 v) v sd ? ? ?1.5 vdc source current continuous (body diode) i s ? ? ?115 madc source current pulsed i sm ? ? ?800 madc 2. pulse test: pulse width 300 s, duty cycle 2.0%. -1 adc rev .o 2/4
leshan radio company, ltd. typical electrical characteristics ! " " #$% &$' &$( &$) &$# &$% %$' %$( %$) %$# % &% % &$% #$% *$% )$% +$% ($% ,$% '$% -$% figure 1. ohmic region &$% %$' %$( %$) %$# &% % &$% #$% *$% )$% +$% ($% ,$% '$% -$% figure 2. transfer characteristics #$) #$# #$% &$' &$( &$) &$# &$% %$' %$( %$) &$# &$%+ &$& &$&% &$% %$-+ %$- %$'+ %$' %$,+ %$,
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leshan radio company, ltd. sc?70 (sot?323) a a2 d e1 b e e a1 c l 3 12 notes: 1. dimensioning and tolerancing per ansi y14.5m, 1982. 2. controlling dimension: inch. 0.05 (0.002) 1.9 0.075 0.65 0.025 0.65 0.025 0.9 0.035 0.7 0.028 mm inches scale 10:1 xx m xx = specific device code m = date code = pb?free package generic marking diagram *this information is generic. please refer to device data sheet for actual part marking. pb?free indicator, ago or microdot a o, may or may not be present. 1 soldering footprint* h e dim a min nom max min millimeters 0.80 0.90 1.00 0.032 inches a1 0.00 0.05 0.10 0.000 a2 0.7 ref b 0.30 0.35 0.40 0.012 c 0.10 0.18 0.25 0.004 d 1.80 2.10 2.20 0.071 e 1.15 1.24 1.35 0.045 e 1.20 1.30 1.40 0.047 0.035 0.040 0.002 0.004 0.014 0.016 0.007 0.010 0.083 0.087 0.049 0.053 0.051 0.055 nom max l 2.00 2.10 2.40 0.079 0.083 0.095 h e e1 0.65 bsc 0.425 ref 0.028 ref 0.026 bsc 0.017 ref rev .o 4/4 l2n7002wt1g , s-l2n7002wt1g
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